The 12th International Workshop on Junction Technology (IWJT2012) will be held on May 14 - 15, 2012 in Shanghai, China. The IWJT, started in 2000 and was held annually in Japan or China, is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors. At the past IWJTs, a number of eminent and experienced scientists and engineers from Asia, America, and Europe presented their latest results on junction technology. The workshop will provide a good opportunity for researchers and engineers to present their new research results, and exchange ideas with leading scientists in this field.


Workshop Scope
(Papers are solicited in, but not limited to the following)

Doping Technology --- Ion implantation, plasma doping, gas and solid doping
Annealing Technology --- Rapid thermal process, laser annealing, flash annealing, SPE, lattice damage and defects
Junction Technology for Novel CMOS Device Structures --- Junction for SOI, strained Si, SiGe, Ge, Schottky barrier S/D MOSFET, and FinFET(Tri-gate FET)
Silicide and Contact Technology for CMOS --- Silicide materials and salicide technology, elevated S/D, low barrier contact, surface pre-treatment
Junction and Contact Technologies for Compound Semiconductors and Quantum Devices --- Schottky and ohmic contacts to wide bandgap compound semiconductors, junction and contact technologies for carbon nanotube, graphene and other nano-, quantum devices, hetero-junction devices
Characterization for Shallow Junction --- Physical and electrical characterization of ultra-shallow junction
Modeling and Simulation --- Modeling and simulation of ultra-shallow junction formation of CMOS
Equipment, Materials and Substrates for Junction Technology


Paper Submission
Prospective authors are requested to submit a detailed abstract in English (Word Template). After reviewing, notification of acceptance will be sent to the authors and the authors will be required to submit their camera-ready full-length papers for proceedings publication. Camera-ready full-length late news papers are also accepted. The proceedings will have an IEEE catalogue number and will be collected in IEEE publication database ---- IEEE X’plore. The proceedings will be published before the workshop and distributed at the workshop.


Important dates

Deadline for Regular Paper Abstract Submission: Jan. 15, 2012

Notification of Regular Paper Acceptance: Mar. 1, 2012

Deadline for Camera-Ready Full-Length Paper Submission: Apr. 1, 2012

Deadline for Late News Submission: Apr. 1, 2012

On-line submission at web-site http://www.iwjt.org is preferred.

OR email submission with a cover letter to iwjt@fudan.edu.cn can be as an alternative.

Co-Sponsored by

Fudan University
The Japan Society of Applied Physics - Silicon Technology Division

Technical Co-Sponsored by
IEEE EDS
IEEE EDS Shanghai Chapter
IEEE EDS Japan Chapter

Supported by
Fudan University
Natural Science Foundation of China