Scope

The workshop will cover various aspects of VLSI-related silicon nanoelectronics. Areas of interest include, but are not limited to:

1. •Si based sub-20 nm FETs with conventional and novel architecture including vertical and multiple-gate devices and novel channel materials
2. •Device physics of Si based nanodevices including quantum effects, nonequilibrium and ballistic transport
3. •Si based nanoscale device modelling and simulations
4. •Extreme processing of Si based nanostructures, including nanopatterning
5. •Junction and insulator technology for Si based nanodevices
6. •Nanoscale surface, interface, and heterojunction effects in Si based devices
7. •Si based device scaling issues including doping fluctuations and atomic granularity
8. •Circuit design issues and novel circuit architectures for Si based nanodevices including silicon based quantum computing
9. •Optoelectronics using silicon nanostructures