The 10th International Workshop on Junction Technology (IWJT2010) will be held on May 10 - 11, 2010 in Shanghai, China. The IWJT, started in 2000 and was held annually in Japan or China, is an open forum focused on the needs and interest of the community of a junction formation technology in semiconductors. At the past IWJTs, a number of eminent and experienced scientists and engineers from Asia, America, and Europe presented their latest results on junction technology. The workshop will provide a good opportunity for researchers and engineers to present their new research results, and exchange ideas with leading scientists in this field.


Workshop Scope
(Papers are solicited in, but not limited to the following)

* Doping Technology --- Ion implantation, plasma doping, gas and solid doping
* Annealing Technology --- Rapid thermal process, laser annealing, flash annealing, SPE, lattice damage and defects
* Junction Technology for Novel CMOS Device Structures --- Junction for SOI, strained Si, SiGe, Ge, and Schottky barrier S/D MOSFET
* Silicide and Contact Technology for CMOS --- Silicide materials and salicide technology, elevated S/D, low barrier contact, surface pre-treatment
* Junction and Contact Technologies for Compound Semiconductors and Quantum Devices --- Schottky and ohmic contacts to wide bandgap compound semiconductors, junction and contact technologies for carbon nanotube and other nano-, quantum devices, hetero-junction devices
* Characterization for Shallow Junction --- Physical and electrical characterization of ultra-shallow junction
* Modeling and Simulation --- Modeling and simulation of ultra-shallow junction formation of CMOS
* Equipment, Materials and Substrates for Junction Technology


Important Dates

Deadline for Late News Submission: Apr. 1, 2010

Deadline for Regular Paper Abstract Submission: Jan. 15, 2010

Notification of Regular Paper Acceptance: Mar. 1, 2010

Deadline for Camera-Ready Full-Length Paper Submission: Apr. 1, 2010

On-line submission at web-site http://www.iwjt2010.com is preferred.
OR email submission with a cover letter to yljiang@fudan.edu.cn can be as an alternative.

Co-Sponsored by

The Chinese Institute of Electronics
The Japan Society of Applied Physics - Silicon Technology Division

Technical Co-Sponsored by
IEEE EDS
IEEE EDS Shanghai Chapter
IEEE EDS Japan Chapter

Supported by
Fudan University
Natural Science Foundation of China